Abstract—
The thermal oxidation of InP in the presence of both a MnO2 chemical stimulator layer produced on its surface by magnetron sputtering and a Mn3(PO4)2 modifier introduced through the gas phase leads to the formation of dielectric nanofilms. According to laser and spectral ellipsometry data, the proposed approach to InP surface modification makes it possible to considerably speed up film growth (by up to 150–200%) compared to stimulator-free oxidation of the semiconductor. The effective modifying impact of Mn3(PO4)2 has been demonstrated by ultrasoft X-ray emission spectroscopy (UXRES), which has confirmed the formation of tetrahedral oxygen coordination of phosphorus essentially throughout across the synthesized films. The UXRES results have been shown to correlate with IR spectroscopy data, which demonstrate the presence of indium and manganese phosphates and polyphosphates in the films: In(PO3)3, InPO4, and Mn3(PO4)2.
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ACKNOWLEDGMENTS
This study was carried out in part using equipment at the Shared Research Facilities Center, Voronezh State University (http://ckp.vsu.ru).
Funding
This work was supported in part by the Russian Federation Ministry of Science and Higher Education, state research target, grant. no. FZGU-2020-0036.
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Mittova, I.Y., Barkov, K.A., Terekhov, V.A. et al. Characterization of Functional Nanofilms on InP by Ultrasoft X-ray Emission and Infrared Spectroscopies. Inorg Mater 57, 1258–1263 (2021). https://doi.org/10.1134/S0020168521120116
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DOI: https://doi.org/10.1134/S0020168521120116