Abstract
Complex investigation of the layers of porous indium phosphide (por-InP), obtained by anodic pulsed electrochemical etching of single-crystal n-InP(100) wafers (n ∼ 1018), has been performed using X-ray diffraction, IR spectroscopy, ultrasoft X-ray spectroscopy, X-ray absorption near-edge structure spectroscopy, and photoluminescence. The data obtained indicate that the surface layers of por-InP have a cluster structure and contain InP quasi-molecules.
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Original Russian Text © E.P. Domashevskaya, V.M. Kashkarov, P.V. Seredin, V.A. Terekhov, S.Yu. Turishchev, I.N. Arsentyev, V.P. Ulin, 2008, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2008, Vol. 72, No. 4, pp. 470–473.
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Domashevskaya, E.P., Kashkarov, V.M., Seredin, P.V. et al. Investigation of porous InP by X-ray diffraction, IR spectroscopy, USXES, XANES spectroscopy, and photoluminescence. Bull. Russ. Acad. Sci. Phys. 72, 439–442 (2008). https://doi.org/10.3103/S1062873808040059
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DOI: https://doi.org/10.3103/S1062873808040059