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Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures

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The interfacial charge density of regrown structures was studied for several␣different material systems: GaAs, InGaAs/InP, and InAlAs-InGaAs superlattice structures on InP. The particular application of interest is in the␣fabrication of nanoscale devices. Such structures require a very low density of interfacial charge at their exposed surfaces in order to avoid Fermi-level pinning and subsequent lateral carrier depletion across the structure. (110)-Oriented samples, mimicking the exposed sidewalls of nano-etched structures, were plasma-etched using a variety of gas-phase chemistries. The interfacial charge density at regrown interfaces was studied using capacitance–voltage (CV) and electrochemical CV techniques after in situ and ex situ pretreatments and epitaxial regrowth. The minimum interfacial charge densities obtained for these material systems were <1011 cm−2. Preferential regrowth around etched nanopillars was demonstrated for InP-based structures.

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Authors and Affiliations

  1. Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, WI, USA

    M. K. Rathi, A. A. Khandekar & T. F. Kuech

  2. Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, USA

    G. Tsvid, J. C. Shin & D. Botez

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  1. M. K. Rathi
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  2. G. Tsvid
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  3. A. A. Khandekar
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  4. J. C. Shin
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  6. T. F. Kuech
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Correspondence to M. K. Rathi.

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Rathi, M.K., Tsvid, G., Khandekar, A.A. et al. Passivation of Interfacial States for GaAs- and InGaAs/InP-Based Regrown Nanostructures. J. Electron. Mater. 38, 2023–2032 (2009). https://doi.org/10.1007/s11664-009-0887-z

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  • DOI: https://doi.org/10.1007/s11664-009-0887-z

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