JJAP Conference Proceedings
Online ISSN : 2758-2450
International Conference and Summer School on Advanced Silicide Technology 2014
Session ID : 011109
Conference information

Host: The Japan Society of Applied Physics

Name : International Conference and Summer School on Advanced Silicide Technology 2014

Location : Tokyo, Japan

Date : July 19, 2014 - July 21, 2014

Light emission and detection materials
Effects of lattice deformations on Raman spectra in β-FeSi2 epitaxial films
Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Tetsu Hattori, Takahiko Higashi
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Abstract

Effects of lattice deformations on Raman spectra were investigated in β-FeSi2 epitaxial films grown on Si substrates. The lattice of the epitaxial film was deformed depending on thermal-annealing temperature (Ta). In Raman spectra, Raman lines of Ag-mode (iron displacements) showed a frequency shift with increasing Ta. The shift of Raman lines showed that the residual strain in the epitaxial films was changed by the lattice deformation. In the temperature dependence of Raman spectra, the temperature shifts of the Raman lines were found to be different between β-FeSi2(100) || Si(001) and β-FeSi2(110)(101) || Si(111) epitaxial films.

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This article is licensed under a Creative Commons [Attribution 4.0 International] license.
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