Keywords
radiation defect
gamma-photons
isochronal annealing
How to Cite
Abstract
The effect of 60Co gamma–photon irradiation on the radiation defects generation and their isochronal annealing in monocrystalline n-Si+4at%Ge:P alloy has been studied. Experimental bulk crystals were grown by Czochralski method in Ar atmosphere. Electrophysical characteristics were determined by the Hall effect measuring in a constant magnetic field at different stages of 20-minute isochronal annealing in 20-400°C temperature interval. It is established, that under the influence of compressive stresses localized near Ge atoms in the crystalline lattice of the experimental SiGe alloy decrease of the annealing temperature of radiation A-centers (VO) takes place. A change in dissociation temperature of radiation E-centers (PV) is revealed, stipulated by their directed migration in the stress field localized near dislocation.
References
Londos C. A., Sgourou E. N., Hall D., Chroneos A., Vacancy-oxygen defects in silicon: the impact of isovalent doping, J. Mater Sci: Mater Electron, 2014, № 25, p.2395–2410.
Londos C.A., Andrianakis A., Emtsev V., Ohyama H., Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium, Semicond. Sci. Technol., 2009, vol. 24, № 075002, p.1-7.
Chroneos A., Sgourou E. N., Londos C. A., Schwingenschlögl U., Oxygen defect processes in silicon and silicon germanium, Applied Physics Reviews, 2015, № 2, p.021306-1 – 021306-16.
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