Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond

Ken-Ichi Sano; Rafal Dylewicz; Xia Man; David Mui; Ji Zhu; Mark Kawaguchi

doi:10.4028/www.scientific.net/SSP.255.277

Paper Titles

The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions
p.255

Oxygen Control for Wet Clean Process on Single Wafer Platform
p.260

Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth
p.265

Post CMP Wet Cleaning Influence on Cu Hillocks
p.270

Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond
p.277

Silica Formation during Etching of Silicon Nitride in Phosphoric Acid
p.285

Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process
p.291

Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper
p.299

Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler
p.304

HomeSolid State PhenomenaSolid State Phenomena Vol. 255Minimizing Wafer Surface Charging for Single-Wafer...

Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond

Abstract:

Wafer charging has become an issue since single-wafer wet clean has been introduced and multiple aspects could be potential root causes. In chemistry and DIW process factors, typical process parameters; flow rate and time were re-evaluated. As an alternative solution, dilute NH₄OH could reduce the wafer surface charging. Hardware parts were also investigated and wafer holding chuck-pin material was revealed to become a risk of discharging failure at edge of wafer. Ionizer has been known to discharge wafer surface; however, it is not enough to remove pre-existing charge from post DIW rinsed wafer. Soft X-ray is challenged to remove pre-existing charge and obtained initial positive result.

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Periodical:

Solid State Phenomena (Volume 255)

Pages:

277-282

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.255.277

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Online since:

September 2016

Authors:

Ken-Ichi Sano*, Rafal Dylewicz, Xia Man, David Mui, Ji Zhu, Mark Kawaguchi

Keywords:

BEOL, Dilute NH₄OH, Ionizer, Single-Wafer Clean, Soft X-Ray, Wafer Charging

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* - Corresponding Author

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