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HomeSolid State PhenomenaSolid State Phenomena Vol. 230Positron Annihilation in IR Transmitting...

Positron Annihilation in IR Transmitting GeS₂-Ga₂S₃ Glasses

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Abstract:

Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in GeS₂-Ga₂S₃ glasses affected by Ga additions. It is shown that Ga-related void sub-system plays a decisive role in positron trapping process, while the overall density variation is defined mainly by Ge-related sub-system. These results serve as basis for new characterization route for inner free-volume structure of these glasses.

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Solid State Phenomena (Volume 230)

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221-227

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.230.221

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Online since:

June 2015

Authors:

Halyna Klym*, A. Ingram, O. Shpotyuk, R. Szatanik, E. Petracovschi, L. Calvez, C. Lin

Keywords:

Chalcogenide Glass, Free-Volume Entities, Positron Trapping

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* - Corresponding Author

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