Bias-Current and Optically Driven Transport Properties of the Hybrid Fe/SiO2/p-Si Structures

Nikita V. Volkov; E.V. Eremin; A.S. Tarasov; S.N. Varnakov; S.G. Ovchinnikov

doi:10.4028/www.scientific.net/SSP.190.526

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Bias-Current and Optically Driven Transport Properties of the Hybrid Fe/SiO₂/p-Si Structures

Abstract:

Pronounced optical-and bias-current-sensitive features of the transport properties of a Fe/SiO₂/p-Si hybrid structure in planar geometry at temperature variation are investigated. Comparative analysis of two Fe/SiO₂/p-Si samples, one with a continuous Fe film and the other with two electrodes formed from a Fe layer and separated by a micron gap, shows that these features are due to the MIS transition with a Schottky barrier near the interface between SiO₂ and p-Si. Resistance of such a MIS transition depends exponentially on temperature and bias. In the structure with a continuous ferromagnetic film, the competition between conductivities of the MIS transition and the Fe layer results in the effect of current channel switching between the Fe layer and a semiconductor substrate. Within certain limits, this process can be controlled by a bias current and optical radiation. The mechanism of the optical effect is photogeneration of electron-hole pairs in the semiconductor substrate near its boundary with SiO₂ layer.