Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot

Yacine Boulfrad; Gaute Stokkan; Mohammed M'Hamdi; Eivind Øvrelid; Lars Arnberg

doi:10.4028/www.scientific.net/SSP.178-179.507

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Visible Light-Emitting Hydrogenated Nanocrystalline Silicon-on-Insulator Films: Formation and Properties
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The Mechanical Modeling of Oxygen-Containing Precipitates in Silicon Wafers on Different Stages of the Getter Formation Process
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Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory
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Application of Double Crucible in Cz Si Crystal Growth
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Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot
p.507

HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Modeling of Lifetime Distribution in a...

Modeling of Lifetime Distribution in a Multicrystalline Silicon Ingot

Abstract:

Lifetime distribution of a multicrystalline silicon ingot of 250 mm diameter and 100 mm height, grown by unidirectional solidification has been modeled. The model computes the combined effect of interstitial iron and dislocation distribution on minority carrier lifetime of the ingot based on Shockley Read Hall (SRH) recombination model for iron point defects and Donolato’s model for recombination on dislocations. The iron distribution model was based on the solid state diffusion of iron from the crucible and coating to the ingot during its solidification and cooling, taking into account segregation of iron to the melt and back diffusion after the end of solidification. Dislocation density distribution is determined from experimental data obtained by PVScan analysis from a vertical cross section slice. Calculated lifetime is fitted to the measured one by fitting parameters relating the recombination strength and the local concentration of iron

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

507-512

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.507

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Online since:

August 2011

Authors:

Yacine Boulfrad, Gaute Stokkan, Mohammed M'Hamdi, Eivind Øvrelid, Lars Arnberg

Keywords:

Defect, Dislocation, Ingot, Iron, Lifetime, Multicrystalline Silicon

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