Versatile Simulation Tool and Novel Measurement Method for Electrical Characterization of Semiconductors

Nadine Schüler; Torsten Hahn; Kay Dornich; J.R. Niklas

doi:10.4028/www.scientific.net/SSP.156-158.241

Paper Titles

Thermal Optimization of Cz Silicon Single Crystal Growth
p.217

Simulation of Iron Distribution after Crystallization of mc Silicon
p.223

Comparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation study
p.229

Effect of Growth Conditions and Catalyst Material on Nanowhisker Morphology: Monte Carlo Simulation
p.235

Versatile Simulation Tool and Novel Measurement Method for Electrical Characterization of Semiconductors
p.241

Simulation of XBIC Contrast of Precipitates in Si
p.247

Dislocation Nucleation in Heteroepitaxial Semiconducting Films
p.251

Impurity Engineering of Czochralski Silicon
p.261

The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage
p.269

HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Versatile Simulation Tool and Novel Measurement...

Versatile Simulation Tool and Novel Measurement Method for Electrical Characterization of Semiconductors

Abstract:

A versatile numerical tool for the simulation of electrical properties of a semiconductor such as minority carrier lifetimes and photoconductivity as a function of defect parameters was developed. Unlike the SRH-model this tool enables to simulate e.g. different measurement conditions and even trapping effects. Contrary to the widely used simulation tool PC1D also non-steady state solutions can be obtained. Furthermore the novel contact less method MDP is presented. Using the example of iron determination the new possibilities arising from combining the novel simulation tool and the method MDP are shown. Simulations for different trapping densities and measurement conditions were executed and exemplary measurements of the trap density and the cross-over point of mc-Si wafers were performed. It was found, that the cross-over point and the sensitivity of iron determination at low level injections is effected by trapping and the chosen non- or steady state measurement conditions.