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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Insights into Watermark Formation and Control

Insights into Watermark Formation and Control

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Abstract:

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Ultra Clean Processing of Silicon Surfaces VII

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

83-86

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.83

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Cite this paper

Online since:

April 2005

Authors:

Hiromitsu Namba, Takehiko Orii, Hiroki Ohno, Glenn W. Gale

Keywords:

DHF Last, Hydrophobic Silicon, Wafer Drying, Watermark

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[1] G. W. Gale, W. Syverson, and J. Brigante, in Proceedings, Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, edited by J. Ruzyllo and R. E. Novak, (Electrochemical Society, 1997), pp.31-37.

[2] J. G. Park, and M. F. Pas, J. Electrochem. Soc., 142, 2028 (1995).

[3] M. Watanabe, M. Hamano, and M. Harazono, Mat. Sci. Eng., B4, 401 (1989). Process Step Upper Exhaust OFF Upper Exhaust ON DHF (1:100) [HF] = 5 ppm [HF] = 0.5 ppm Rinse Dry