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HomeMaterials Science ForumMaterials Science Forum Vol. 978Resistive Switching Behaviour of Dip Coated ZnO...

Resistive Switching Behaviour of Dip Coated ZnO Films with the Changing with Drawal Speed

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Abstract:

Zinc Oxide (ZnO) thin films were produced by the sol gel dip coating process on the p-type silicon substrate with various withdrawal speeds changing from 1 to 4 cm/min, respectively. The films were annealed at a temperature of 500 ^°C for an hour in air ambient. The thin film thickness was found to be raised with the rise in withdrawal speed. The uniform distribution of the grains was appeared for all the films. The evolution of c-axis oriented (002) peak was revealed from X-ray diffraction (XRD) studies. The microstructural and optical properties of ZnO films were investigated by Raman, FTIR and photoluminescence spectroscopy (PL). The resistive switching properties of ZnO based memristors were studied by performing the current-voltage (I-V) measurements, where the thin films coated with lower withdrawal speed, have shown better switching property with rapid rise and fall of current during SET and RESET process, respectively.

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Periodical:

Materials Science Forum (Volume 978)

Pages:

384-389

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.978.384

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Online since:

February 2020

Authors:

Sritama Roy, Saswati Soumya Dash, Prasanna Kumar Sahu, Smita Mishra, Jyoti Prakash Kar*

Keywords:

Dip Coating, FESEM, Memristor, X-Ray Diffraction, ZnO Thin Film

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* - Corresponding Author

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