Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

Kidist Moges; Mitsuru Sometani; Takuji Hosoi; Takayoshi Shimura; Shinsuke Harada; Heiji Watanabe

doi:10.4028/www.scientific.net/MSF.963.226

Paper Titles

DFT Calculation for Oxidation Reaction of SiC(0001)
p.208

Characterization of SiO₂/SiC Near-Interface Oxide Traps with Constant-Capacitance Deep-Level Transient Spectroscopy
p.213

Characterization of Near-Interface Traps at Dielectric/SiC Interfaces Using CCDLTS
p.217

Atomic Coordination Analysis of Nitrogen Introduced in SiO₂/ SiC Interface and SiO₂ Layer by XAFS Measurement
p.222

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N₂-Annealed SiO₂/4H-SiC(0001) Structures
p.226

SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements
p.230

A Temperature Independent Effect of Near-Interface Traps in 4H-SiC MOS Capacitors
p.236

Identification of Near-Interface Trap Distribution by Parameter Estimation
p.240

Impact of Pit Defects on the Initial Electrical Characteristics of Planar-MOSFET Devices
p.244

HomeMaterials Science ForumMaterials Science Forum Vol. 963Sub-nm-Scale Depth Profiling of Nitrogen in NO-...

Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N₂-Annealed SiO₂/4H-SiC(0001) Structures

Abstract:

We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO₂/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N₂)-annealed SiO₂/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO₂/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO₂ within few nanometers of the interface. The high-temperature N₂ annealing was found to induce not only SiO₂/SiC interface nitridation similarly to NO annealing but also SiO₂ surface nitridation.