Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers

Birgit Kallinger; Jürgen Erlekampf; Katharina Rosshirt; Patrick Berwian; Matthias Stockmeier; Michael Vogel; Philip Hens; Frank Wischmeyer

doi:10.4028/www.scientific.net/MSF.963.109

Paper Titles

High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process
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Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N₂Flow Rate under High Growth Rate Condition
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Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool
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Extensive 99% Killer Defect Free 4H-SiC Epitaxial Layer toward High Current Large Chip Devices
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Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers
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Basal Plane Dislocation Conversion Enhancement in 4H-SiC Homo-Epitaxial Layers by Ion Implantation into the Wafer
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Effect of Surface Etching Conditions on Stacking Faults in 4H-SiC Epitaxy
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New SiC Epitaxial Growth Process with up to 100% BPD to TED Defect Conversion on 150mm Hot-Wall CVD Reactor
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Germanium Incorporation in Silicon Carbide Epitaxial Layers Using Molecular Beam Epitaxy on 4H-SiC Substrates
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HomeMaterials Science ForumMaterials Science Forum Vol. 963Influence of Substrate Properties on the...

Influence of Substrate Properties on the Defectivity and Minority Carrier Lifetime in 4H-SiC Homoepitaxial Layers

Abstract:

Two fully loaded epitaxial growth runs with 16 wafers in total were conducted in the AIXTRON G5 WW reactor in order to keep epigrowth conditions constant. The wafers were selected with a large spread of specific resistivity and dislocation densities. The resulting epilayers showed very good intra-wafer homogeneities as well as excellent wafer-to-wafer and run-to-run reproducibility with regard to epilayer thickness and doping concentration, point defect concentrations of Z_1/2 and EH_6/7 and the resulting Shockley-Read-Hall carrier lifetime. We found that the dislocation densities of the underlying substrates are influencing the stacking fault densities of the epilayers, which then vary between 0.1 and 10 cm^-2. A substrate effect on the effective minority carrier lifetime was found.