Three Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron Microscopy

Takahiro Sato; Yuya Suzuki; Hiroyuki Ito; Toshiyuki Isshiki; Kuniyasu Nakamura

doi:10.4028/www.scientific.net/MSF.897.173

Paper Titles

Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
p.155

Universal Parameter Evaluating SiO₂/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy
p.159

Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
p.163

The Effect of Charge Redistribution on Flat-Band Voltage Turnaround in 4H-SiC MOS Capacitors
p.167

Three Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron Microscopy
p.173

Correlation between Local Strain Distribution and Microstructure of Grinding-Induced Damage Layers in 4H-SiC(0001)
p.177

4H-SiC Defects Evolution by Thermal Processes
p.181

Elementary Screw and Mixed-Type Dislocations in 4H-SiC Characterized by X-Ray Topography Taken with Six Equivalent 11-28 g-Vectors and a Comparison to Etch Pit Evaluation
p.185

Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules
p.189

HomeMaterials Science ForumMaterials Science Forum Vol. 897Three Dimensional Dislocation Analysis of...

Three Dimensional Dislocation Analysis of Threading Mixed Dislocation Using Multi Directional Scanning Transmission Electron Microscopy

Abstract:

The recently developed multi directional scanning transmission electron microscopy (MD-STEM) technique has been applied to exactly determine the Burgers vector (b) and dislocation vector (u) of a threading mixed dislocation in a silicon carbide (SiC) as-epitaxial wafer. This technique utilizes repeated focused ion beam (FIB) milling and STEM observation of the same dislocation from three orthogonal directions (cross-section, plan-view, cross-section). Cross section STEM observation in the [1-100] viewing direction showed that the burgers vector have a and c components. Subsequent plan view STEM observation in the [000-1] direction indicated that the b=[u -2u u w] (u≠0 and w≠0). Final cross section STEM observation in the [11-20] direction confirmed that the dislocation was an extended dislocation, with the Burgers vector experimentally found to be b = [1-210]a/3 + [0001]c which decomposes into two partial dislocations of b_p1 = [0-110]a/3 + [0001]c/2 and b_p2 = [1-100]a/3 + [0001]c/2. The dislocation vector u is [-12-10]a/3 + [0001]c. This technique is an effective method to analyze the dislocation characteristics of power electronics devices.