Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique

Gerald Rescher; Gregor Pobegen; Thomas Aichinger; Tibor Grasser

doi:10.4028/www.scientific.net/MSF.897.143

Paper Titles

Two-Dimensional Imaging of Trap Distribution in SiO₂/SiC Interface Using Local Deep Level Transient Spectroscopy Based on Super-Higher-Order Scanning Nonlinear Dielectric Microscopy
p.127

Oxidation Effect for the Carbon Related Defect Formation in SiC/SiO₂ Interface by First Principles Calculation
p.131

Low Density of Near-Interface Traps at the Al₂O₃/4H-SiC Interface with Al₂O₃ Made by Low Temperature Oxidation of Al
p.135

Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
p.139

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique
p.143

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation
p.147

Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS
p.151

Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation
p.155

Universal Parameter Evaluating SiO₂/SiC Interface Quality Based on Scanning Nonlinear Dielectric Microscopy
p.159

HomeMaterials Science ForumMaterials Science Forum Vol. 897Improved Interface Trap Density Close to the...

Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique

Abstract:

We study the interface properties of 4H silicon carbide Si-face 0001 and a-face 11220 power MOSFETs using the charge pumping technique. MOSFETs produced on the a-face show a higher electron mobility than Si-face devices, although their charge pumping signal is 5 times higher, indicating a higher interface/border trap density. We show the main contribution to the interface/border trap density on a-face devices originates from deep states in a wide range around midgap, whereas Si-face devices show a higher and exponentially increasing interface/border state density close to the conduction band edge of 4H silicon carbide, resulting in reduced mobility.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

143-146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.143

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Online since:

May 2017

Authors:

Gerald Rescher*, Gregor Pobegen, Thomas Aichinger, Tibor Grasser

Keywords:

4H-SiC, A-Face, Charge Pumping, Interface Trap Density, MOSFET, Si-Face

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