Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)

Andreas Hürner; Heinz Mitlehner; Tobias Erlbacher; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.858.917

Paper Titles

Readiness of SiC MOSFETs for Aerospace and Industrial Applications
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Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C
p.903

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
p.908

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
p.913

Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)
p.917

A 500 °C Monolithic SiC BJT Latched Comparator
p.921

Design Impact on the Static and Short-Circuit Characteristics of SiC-SIT with Non-Uniformly Doped Channel
p.925

Current Gain Stability of SiC Junction Transistors Subjected to Long-Duration DC and Pulsed Current Stress
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Comparison of Energy Losses in High-Current 1700 V Switches
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Conduction Loss Reduction for Bipolar Injection...

Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)

Abstract:

In this study, the potential of forward conduction loss reduction of Bipolar-Injection Field-Effect-Transistors (SiC-p-BIFET) with an intended blocking voltage of 10kV by adjusting the doping concentration in the channel-region is analyzed. For the optimization of the SiC-p-BIFET, numerical simulations were carried out. Regarding a desired turn-off voltage of approximately 25V, the optimum doping concentration in the channel-region was found to be 1.4x10¹⁷cm^-3. Based on these results, SiC-p-BIFETs were fabricated and electrically characterized in the temperature range from 25°C up to 175°C. In this study, the differential on-resistance was found to be 110mΩcm² for a temperature of 25°C and 55mΩcm² for a temperature of 175°C. In comparison to our former results, a reduction of the differential on-resistance of about 310mΩcm² at room temperature is demonstrated.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

917-920

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.917

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Online since:

May 2016

Authors:

Andreas Hürner, Heinz Mitlehner, Tobias Erlbacher, Anton J. Bauer, Lothar Frey

Keywords:

BiFET, Bipolar, High-Voltage, Solid-State-Circuit Breaker

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