Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces

Tomasz Sledziewski; Heiko B. Weber; M. Krieger

doi:10.4028/www.scientific.net/MSF.858.697

Paper Titles

Flatband Voltage Shift Depending on SiO₂/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics
p.681

Atomic Layer Deposition of Al₂O₃ Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC
p.685

Investigation of Interface State Density with Varied SiO₂ Thickness in La₂O₃/SiO₂/4H-SiC MOS Capacitors
p.689

Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS
p.693

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO₂ Interfaces
p.697

Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O
p.701

Conduction Mechanisms at SiO₂/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N₂O
p.705

3C-SiC Microdisks for Visible Photonics
p.711

Etching Rate Behavior of 4H-Silicon Carbide Epitaxial Film Using Chlorine Trifluoride Gas
p.715

HomeMaterials Science ForumMaterials Science Forum Vol. 858Passivation and Generation of States at...

Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO₂ Interfaces

Abstract:

In this work the effect of phosphorus on the electrical properties of n-type 4H-SiC MOS capacitors is studied. Phosphorus ions are implanted into the epitaxial layers prior to the deposition of SiO₂ by PECVD, in shallow depths and at concentrations at the oxide-semiconductor interface in the range of (5 x 10¹⁷…1 x 10¹⁹) cm^-3. Those samples are compared with ³¹P-implanted 4H-SiC MOS capacitors with thermally grown oxides, which were primarily investigated in the previous work of the authors. It is shown that independently of the oxide technology phosphorus may lead to decrease of the density of interface traps, whose response time to the AC voltage is longer than 1 µs. The side-effect of the implantation of phosphorus is generation of the very fast interface states, which are able to follow the frequencies over 1 MHz.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

697-700

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.697

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Online since:

May 2016

Authors:

Tomasz Sledziewski*, Heiko B. Weber, M. Krieger

Keywords:

4H-SiC, Interface Traps, Ion Implantation, Phosphorus

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References

[1] R. Schorner, P. Friedrichs and D. Peters, IEEE Transactions on Electron Devices 46 (1999) 533.

Google Scholar

[2] V. V. Afanas'ev, M. Bassler, G. Pensl and M. Schulz, Applied Physics Letters 80 (2002) 3219.

Google Scholar

[3] T. Kimoto, H. Kawano, M. Noborio, J. Suda and H. Matsunami, Material Science Forum 527-529 (2006) 987.

Google Scholar

[4] L. K. Swanson, P. Fiorenza, F. Giannazzo, A. Frazzetto and F. Roccaforte, Applied Physics Letters 101 (2012) 193501.

Google Scholar

[5] G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, A. Stesman, T. Kimoto and A. Schöner, Physica Status Solidi 245 (2008) 1378.

DOI: 10.1002/pssb.200844011

Google Scholar

[6] D. Okamoto, H. Yano, K. Hirata, T. Hatayama and T. Fuyuki, IEEE Electron Device Letters 31 (2010) 710.

DOI: 10.1109/led.2010.2047239

Google Scholar

[7] T. Sledziewski, A. Mikhaylov, S. Reshanov, A. Schöner, H. B. Weber and M. Krieger, Material Science Forum 778-780 (2013) 575.

DOI: 10.4028/www.scientific.net/msf.778-780.575

Google Scholar

[8] J. Ziegler, The Stopping and Range of Ions in Solids, Pergamon Press (1985).

Google Scholar

[9] R. Castagne and A. Vapaille, Surface Science 28 (1971) 157.

Google Scholar

[10] H. Yoshioka, T. Nakamura and T. Kimoto, Journal of Applied Physics 11 (2012) 14502.

Google Scholar