CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figure of Merit

Qing Chun Jon Zhang; Jennifer Duc; Brett Hull; Jonathan Young; Sei Hyung Ryu; Scott Allen; John W. Palmour

doi:10.4028/www.scientific.net/MSF.821-823.765

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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823CIMOSFET: A New MOSFET on SiC with a Superior...

CIMOSFET: A New MOSFET on SiC with a Superior R_on·Q_gdFigure of Merit

Abstract:

A new MOSFET structure named the CIMOSFET (Central Implant MOSFET) has been presented and experimentally confirmed on SiC. The novelty of the CIMOSFET lies in a p-type implant introduced in the middle of the JFET area to shield the oxide interface field from the drain bias. Compared to the commercially available 1200 V SiC DMOSFET, this new concept has significantly reduced the on-resistance (R_on) and gate-drain capacitance (C_gd) simultaneously, produced a record low R_on·Q_gdFigure of Merit of 455 mΩ·nC at 25°C, and 700 mΩ·nC at 150°C (~30% of the best data found). Only a 55% increase in R_on from 25°C to 150°C has been achieved due to the highly doped drift layer used on the CIMOSFET. Inductive load switching measurements have shown the CIMOSFET exhibits a fast switching performance. The CIMOSFET blocks 1600 V even though its drift doping is higher than that of the conventional DMOSFETs.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

765-768

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.765

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Online since:

June 2015

Authors:

Qing Chun Jon Zhang*, Jennifer Duc, Brett Hull, Jonathan Young, Sei Hyung Ryu, Scott Allen, John W. Palmour

Keywords:

CIMOSFET, Gate-Drain Capacitance (C_gd), MOSFET, On-Resistance

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* - Corresponding Author

References

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