High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si2Cl6+C3H8

Hee Tae Lee; Hee Jun Lee; Mi Seon Park; Yeon Suk Jang; Won Jae Lee; Jung Gon Kim; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.821-823.197

Paper Titles

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Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning
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High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si₂Cl₆+C₃H₈
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Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction
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Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation
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Understanding of the Growth Mechanism Leading to Twin Boundary Elimination during 3C-SiC Heteroepitaxy on α-SiC Substrate by CVD
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PLD Grown 3C-SiC Thin Films on Si: Morphology and Structure
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823High Quality 3C-SiC (111) Epitaxial Layer on Si...

High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si₂Cl₆+C₃H₈

Abstract:

The 3C-SiC (111) layer has been grown on Si (110) substrate by using hexachloro-disilane (HCDS) and propane. The propane flow rate was controlled in the carbonization step and the growth step for obtaining SiC layer with high crystal quality. The high quality epitaxial 3C-SiC (111) layer was successfully grown at growth temperature of 1280°C and lower propane flow rate condition. Grown 3C-SiC epitaxial layers were systematically analyzed by an optical microscope, Raman spectroscopy, FE-SEM and XRD

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

197-200

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.197

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Online since:

June 2015

Authors:

Hee Tae Lee, Hee Jun Lee, Mi Seon Park, Yeon Suk Jang, Won Jae Lee*, Jung Gon Kim, Shigehiro Nishino

Keywords:

3C-SiC, CVD, Epitaxial Growth, HCDS, Si (110)

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