High Temperature Reliability of the SiC-MOSFET with Copper Metallization

Hiroaki Okabe; Motoru Yoshida; Takaaki Tominaga; Jun Fujita; Kazuyo Endo; Yoshinori Yokoyama; Kazuyasu Nishikawa; Yoshihiko Toyoda; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.778-780.955

Paper Titles

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer
p.939

Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
p.943

Utilization of SiC MOSFET Body Diode in Hard Switching Applications
p.947

Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode
p.951

High Temperature Reliability of the SiC-MOSFET with Copper Metallization
p.955

Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs
p.959

Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm² SiC-MOSFET
p.963

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications
p.967

Comparison of 600V Si, SiC and GaN Power Devices
p.971

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780High Temperature Reliability of the SiC-MOSFET...

High Temperature Reliability of the SiC-MOSFET with Copper Metallization

Abstract:

We investigated the SiC-MOSFET with Cu metallization instead of conventional Al metallization to apply to high reliability power modules. As Cu has higher electrical and thermal conductivity, yield strength, and tolerance of its migration than those of Al, applying Cu to metallization and wire bonds will lead to longer lifetime for power modules. One of the major difficulties with Cu metallization is its high diffusivity into SiO₂ and poly-Si which are used as gate oxide, interlayer oxide, and gate electrodes in SiC-MOSFETs, resulting in degradation of devices. We fabricated the SiC-MOSFET with Cu metallization and a diffusion barrier. We have successfully obtained good characteristics same as conventional Al metallization and demonstrated its high temperature reliability.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

955-958

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.955

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Online since:

February 2014

Authors:

Hiroaki Okabe, Motoru Yoshida, Takaaki Tominaga, Jun Fujita, Kazuyo Endo, Yoshinori Yokoyama, Kazuyasu Nishikawa, Yoshihiko Toyoda, Satoshi Yamakawa

Keywords:

Copper Metallization, MOSFET, Silicon Carbide (SiC)

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