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Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

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Abstract:

Advanced high-voltage (≥10 kV) silicon carbide (SiC) devices described in this paper have the potential to significantly impact the system size, weight, high-temperature reliability, and cost of modern variable-speed medium-voltage (MV) systems such as variable speed (VSD) drives for electric motors, integration of renewable energy including energy storage, micro-grids, traction control, and compact pulsed power systems. In this paper, we review the current status of the development of 10 kV-20 kV class power devices in SiC, including MOSFETs, JBS diodes, IGBTs, GTO thyristors, and PiN diodes at Cree. Advantages and weakness of each device are discussed and compared. A strategy for high-voltage SiC power device development is proposed.

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Info:

Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1089-1095

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1089

Citation:

Cite this paper

Online since:

February 2014

Authors:

Lin Cheng*, John W. Palmour, Anant K. Agarwal, Scott T. Allen, Edward V. Brunt, Gang Yao Wang, Vipindas Pala, Woong Je Sung, Alex Q. Huang, Michael J. O'Loughlin, Albert A. Burk, David E. Grider, Charles Scozzie

Keywords:

GTO, High Voltage, IGBT, Medium-Voltage Drive, MOSFET, Power Diode, Power Grid, Pulsed Power, Renewable Energy Conversion, Silicon Carbide (SiC), Variable Speed Drive

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* - Corresponding Author

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