Low Temperature Homoepitaxial Growth of 4H-SiC on 4° Off-Axis Carbon-Face Substrate Using BTMSM Source
p.247
p.247
Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers
p.251
p.251
3C-SiC Heteroepitaxy on Hexagonal SiC Substrates
p.257
p.257
3C-SiC Growth on (001) Si Substrates by Using a Multilayer Buffer
p.263
p.263
Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations
p.267
p.267
Innovative 3C-SiC on SiC via Direct Wafer Bonding
p.271
p.271
Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates
p.275
p.275
Color Chart for Thin SiC Films Grown on Si Substrates
p.279
p.279
Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation
p.283
p.283
Heteroepitaxial Growth of 3C-SiC on Polar Faces of 6H-SiC Substrates, TEM Investigations
Abstract:
Abstract Results of an epitaxial growth of 3C-SiC epilayers on Si (0001) and C(000¯1) faces of hexagonal 6H-SiC substrates are described. TEM study of grown layers as well as interface between cubic and hexagonal polytypes is presented. Difference between the layers on the Si and C faces are discussed.
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Info:
Periodical:
Materials Science Forum (Volumes 740-742)
Pages:
267-270
Citation:
Online since:
January 2013
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