Focused Ion-Beam (FIB) Nanomachining of Silicon Carbide (SiC) Stencil Masks for Nanoscale Patterning
p.889
p.889
Hexagonal Faceted SiC Nanopillars Fabricated by Inductively Coupled SF6/O2 Plasma Method
p.893
p.893
Epitaxial Growth, Mechanical, Electrical Properties of SiC/Si and SiC/Poli-Si
p.897
p.897
ECR-Ectching of Submicron and Nanometer Sized 3C-SiC(100) Mesa Structures
p.901
p.901
Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy
p.905
p.905
Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
p.911
p.911
Experimental Demonstration of 1200V SiC-SBDs with Lower Forward Voltage Drop at High Temperature
p.917
p.917
Performance of a 650V SiC Diode with Reduced Chip Thickness
p.921
p.921
A Fully Electrically Isolated Package for High Temperature SiC Sensors
p.925
p.925
Local Anodic Oxidation of Phosporous-Implanted 4H-SiC by Atomic Force Microscopy
Abstract:
In this work, local oxidation behavior in phosphorous ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (LO) has been performed on the implanted samples, with and without activation anneal, using varying applied bias (15/20/25 V). It has been clearly shown that the post-implantation annealing process at 1650 oC has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.
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Info:
Periodical:
Materials Science Forum (Volumes 717-720)
Pages:
905-908
Citation:
Online since:
May 2012
Keywords:
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