Crack-Less Wafer-Level Packaging Using Flash Heating Technique for Micro Devices

Takahiro Namazu; Kohei Ohtani; Keisuke Yoshiki; Shozo Inoue

doi:10.4028/www.scientific.net/MSF.706-709.1979

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HomeMaterials Science ForumMaterials Science Forum Vols. 706-709Crack-Less Wafer-Level Packaging Using Flash...

Crack-Less Wafer-Level Packaging Using Flash Heating Technique for Micro Devices

Abstract:

In this article, a new technique for controlling crack position and its propagation direction in solder-bonding using Al/Ni exothermic reaction is described. Sputtered Al/Ni multilayer film is able to produce heat instantly by its self-propagating exothermic reaction, and the reactive film can be used as heat source for solder-bonding. During the reaction, however, volume reduction by approximately 12% occurs due to crystal structural change from fcc to bcc and lattice-spacing reduction. Consequently, cracks are produced in the reacted NiAl structure. The cracks negatively affect the strength of the bonded system. We have found a new technique for controlling crack position and its propagation direction. Multiple ignitions for reaction demonstrated that cracks in reacted NiAl film can be controlled. When applying the flash heating technique to wafer-level bonding, cracks are probably produced. If cracks can be fabricated on dicing cut lines by using the simultaneous multiple reactions technique, crack-less solder-bonded Si hermetic packages would be realized.

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Periodical:

Materials Science Forum (Volumes 706-709)

Pages:

1979-1983

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.706-709.1979

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Online since:

January 2012

Authors:

Takahiro Namazu, Kohei Ohtani, Keisuke Yoshiki, Shozo Inoue

Keywords:

Al/Ni Reactive Film, Bonding, Crack, Exothermic Reaction, Micro-Electromechanical System (MEMS), Packaging, Soldering

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References

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