Effect of Thermal Annealing on Electrical Properties of Si-LiNbO3

Valentin M. Ievlev; Maxim P. Sumets; Alexander V. Kostyuchenko

doi:10.4028/www.scientific.net/MSF.700.53

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HomeMaterials Science ForumMaterials Science Forum Vol. 700Effect of Thermal Annealing on Electrical...

Effect of Thermal Annealing on Electrical Properties of Si-LiNbO₃

Abstract:

The substructure and electrical properties of the films with the thickness up to 2.0 µm deposited on Si by the methods of the radio frequency magnetron and ion-beam sputtering of a LiNbO₃ target have been investigated. It has been established that in thermally annealed samples an activated conduction mechanism with variable jump distance takes place. As a result of thermal annealing a decrease in the charge localization centers (CLC) in the LiNbO₃ films from N_t=3·10¹⁸cm^-3 to N_t=3·10¹⁶cm^-3 occurs.

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Periodical:

Materials Science Forum (Volume 700)

Pages:

53-57

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.700.53

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Online since:

September 2011

Authors:

Valentin M. Ievlev, Maxim P. Sumets, Alexander V. Kostyuchenko

Keywords:

Electrical Properties, Ferroelectric, Structural Analysis, Thin Films of LiNbO₃

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