Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current

Andrew Ritenour; David C. Sheridan; Volodymyr Bondarenko; Jeff B. Casady

doi:10.4028/www.scientific.net/MSF.645-648.937

Paper Titles

Charge Collection Efficiency of 6H-SiC P⁺N Diodes Degraded by Low-Energy Electron Irradiation
p.921

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
p.925

Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations
p.929

Fast Switching with SiC VJFETs - Influence of the Device Topology
p.933

Performance of 15 mm² 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current
p.937

Radiation Hardness Evaluation of SiC-BGSIT
p.941

Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
p.945

Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
p.949

Amplitude Shift Keyed Radio Communications for Hostile Environments
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Performance of 15 mm2 1200 V Normally-Off SiC...

Performance of 15 mm² 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current

Abstract:

Recently 63 m, 100 m, and 125 m 1200 V normally-off SiC VJFETs have become commercially available and 99% efficiency has been demonstrated in a single-phase solar inverter using these components [1]. They exhibit low specific on-resistance (3 m∙cm2), high saturation current density (1000 A∙cm-2), and low switching losses. For some applications, including 30 to 100 kW inverter modules and those requiring high surge current capability, larger die size is required. This paper reports the static and dynamic performance of 15 mm2 1200 V normally-off VJFETs with 25 m on-resistance and 120 A saturation current at 25 °C.