10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Qing Chun Jon Zhang; Robert  Callanan; Anant K. Agarwal; Albert A. Burk; Michael  J. O'Loughlin; John W. Palmour; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.645-648.1025

Paper Titles

Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer
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Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
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9 kV, 1 cm² SiC Gate Turn-Off Thyristors
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Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs
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10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
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SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter
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2.2 kV SiC BJTs with Low V_CESAT Fast Switching and Short-Circuit Capability
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Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence
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Optical Insights into the Internal Electronic and Thermal Behavior of 4H-SiC Bipolar Devices
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-64810 kV, 10 A Bipolar Junction Transistors and...

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Abstract:

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.