9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

Anant K. Agarwal; Qing Chun Jon Zhang; Robert  Callanan; Craig Capell; Albert A. Burk; Michael  J. O'Loughlin; John W. Palmour; Victor Temple; Robert E. Stahlbush; Joshua D. Caldwell; Heather O'Brian; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.645-648.1017

Paper Titles

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
p.999

Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
p.1005

Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer
p.1009

Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
p.1013

9 kV, 1 cm² SiC Gate Turn-Off Thyristors
p.1017

Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs
p.1021

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
p.1025

SiC Heterojunction Bipolar Transistors with AlN/GaN Short-Period Superlattice Widegap Emitter
p.1029

2.2 kV SiC BJTs with Low V_CESAT Fast Switching and Short-Circuit Capability
p.1033

HomeMaterials Science ForumMaterials Science Forum Vols. 645-6489 kV, 1 cm2 SiC Gate Turn-Off Thyristors

9 kV, 1 cm² SiC Gate Turn-Off Thyristors

Abstract:

In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates with much reduced Basal Plane Dislocation (BPD) density. The static and dynamic characteristics are described. A forward drop of 3.7 V at 100 A (100 A/cm2) is measured at 25°C. A slight positive temperature coefficient of the forward drop is present at 300 A/cm2, indicating the possibility of paralleling multiple devices for higher current capability. The device exhibits extremely low leakage currents at high temperatures. The device has shown fast turn-on time of 53.9 nsec, and ~3.5 s of turn-off time, respectively. A stable forward voltage drop after electrical stress for >1000 hours has been achieved.