Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Brett A. Hull; Charlotte  Jonas; Sei Hyung Ryu; Mrinal K. Das; Michael  J. O'Loughlin; Fatima Husna; Robert  Callanan; Jim Richmond; Anant K. Agarwal; John W. Palmour; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.615-617.749

Paper Titles

Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
p.731

Silicon Carbide Static Induction Transistor with Implanted Buried Gate
p.735

Short-Circuit Operation of SiC Buried Gate Static Induction Transistors (SiC BGSITs)
p.739

Critical Issues for MOS Based Power Devices in 4H-SiC
p.743

Performance of 60 A, 1200 V 4H-SiC DMOSFETs
p.749

Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
p.753

1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
p.757

Effects of N Implantation before Gate Oxidation on the Performance of 4H-SiC MOSFET
p.761

High Channel Mobility of 4H-SiC MOSFETs Fabricated by Over-Oxidation of the N-/Al-Coimplanted Surface Layer
p.765

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

Abstract:

Large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m•cm2 (at VGS = 20 V) able to conduct 60 A at a power dissipation of 200 W/cm2 are presented. On-resistance is fairly stable with temperature, increasing from 11.5 m•cm2 (at VGS = 15 V) at 25°C to 14 m•cm2 at 150°C. The DMOSFETs exhibit avalanche breakdown at 1600 V with the gate shorted to the source, although sub-breakdown leakage currents up to 50 A are observed at 1200 V and 200°C due to the threshold voltage lowering with temperature. When switched with a clamped inductive load circuit from 65 A conducting to 750 V blocking, the turn-on and turn-off energies at 150°C were less than 4.5 mJ.