SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
p.77
p.77
Silicon Carbide Growth:C/Si Ratio Evaluation and Modeling
p.83
p.83
Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
p.89
p.89
Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes
p.95
p.95
Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
p.99
p.99
High Quality Epitaxial Growth on 4° Off-Axis 4H SiC with Addition of HCl
p.103
p.103
Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD
p.107
p.107
Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity
p.111
p.111
Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor
p.115
p.115
Extremely Uniform, High Quality SiC Epitaxy on 100-mm Substrates
Abstract:
We have developed a horizontal hot-wall reactor for growing extremely uniform epilayers on 100-mm diameter SiC substrates using a novel supplemental reagent source. Doping and thickness variations of 2% and 1% s / mean, respectively, have been demonstrated. The typical defect density is 2 cm-2. We describe the growth cell in detail and discuss the development of the design and process to produce these very uniform epilayers.
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Info:
Periodical:
Materials Science Forum (Volumes 600-603)
Pages:
99-102
Citation:
Online since:
September 2008
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