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Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC

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Abstract:

Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated. Annealing temperature and annealing time dependence of acceptor activation and activated hole’s behavior were examined. Poly-type recovery from the implantation induced lattice disordering during the annealing was investigated. The existence of meta-stable crystalline states for acceptor activation, and related scattering centers due to annealing is reported To achieve 100% acceptor activation and to reduce strain after ion implantation, annealing at 2000°C for 10 min. was required.

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

585-590

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.585

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Online since:

September 2008

Authors:

Ryo Hattori, Tomokatsu Watanabe, T. Mitani, Hiroaki Sumitani, Tatsuo Oomori

Keywords:

Activation Annealing, Defect, Hole Mobility, Ion Implantation, Silicon Carbide (SiC)

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