Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
p.345
p.345
Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
p.349
p.349
Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
p.353
p.353
Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
p.357
p.357
X-Ray Rocking Curve Characterization of SiC Substrates
p.361
p.361
TEM Observation of the Polytype Transformation of Bulk SiC Ingot
p.365
p.365
Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films
p.369
p.369
Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition
p.373
p.373
Investigation of Pits Formed at Oxidation on 4H-SiC
p.377
p.377
X-Ray Rocking Curve Characterization of SiC Substrates
Abstract:
X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown to be the major contribution to the measured broadening (FWHM). The feedback on lattice quality is used to optimize our SiC growth process. In the optimized growth runs, the typical variation in rocking curve sample angle Ω across the entire 3” diameter wafer is about 0.2 degrees. Possible mechanisms leading to changes in the lattice curvature are discussed.
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Info:
Periodical:
Materials Science Forum (Volumes 600-603)
Pages:
361-364
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Online since:
September 2008
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