Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals

Sakwe Aloysius Sakwe; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.556-557.263

Paper Titles

Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects
p.247

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
p.251

Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
p.255

Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
p.259

Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals
p.263

In Situ X-Ray Measurements of Defect Generation during PVT Growth of SiC
p.267

Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process
p.271

Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature Photoluminescence Mapping under Deep UV Excitation
p.275

Partial Dislocations under Forward Bias in SiC
p.279

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Influence of Growth Temperature on the Evolution...

Influence of Growth Temperature on the Evolution of Dislocations during PVT Growth of Bulk SiC Single Crystals

Abstract:

In this paper we report, based on analysis of dislocation statistics, on the influence of growth temperature on the nucleation, propagation and annihilation mechanisms of dislocations. Using KOH defect etching and optical microscopy we have conducted dislocation tracking along lengths of crystals grown under various process temperature regimes to study their evolution and propagation mechanisms statistically. We further present the influence of growth temperature on the step structure of the growth front using AFM measurements. From the analysis of dislocation statistics and step structure in relation to temperature we derive the role of surface kinetics of the SiC gas species on the growth surface in dislocation evolution during PVT growth of bulk SiC.