Thermal Evolution of Defects in Semi-Insulating 4H SiC

W.E. Carlos; E.R. Glaser; N.Y. Garces; B.V. Shanabrook; Mark A. Fanton

doi:10.4028/www.scientific.net/MSF.527-529.531

Paper Titles

Quenching Photoconductivity and Photoelectric Memory in 6H-SiC
p.513

Deep Level Point Defects in Semi-Insulating SiC
p.517

Divacancy and Its Identification: Theory
p.523

Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
p.527

Thermal Evolution of Defects in Semi-Insulating 4H SiC
p.531

Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
p.535

Signature of the Negative Carbon Vacancy-Antisite Complex
p.539

Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
p.543

Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
p.547

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Thermal Evolution of Defects in Semi-Insulating 4H...

Thermal Evolution of Defects in Semi-Insulating 4H SiC

Abstract:

High temperature anneals were used to study the evolution of native defects in semiinsulating (SI), ultrahigh purity SiC using electron paramagnetic resonance (EPR), infrared and visible photoluminescence (PL) and COREMA (Contactless Resistivity Mapping) measurements. In EPR we observe a defect that we tentatively identify as VC-CSi-VC. The EPR intensities of this defect and the UD1 IRPL increase significantly with annealing in all samples.

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Materials Science Forum (Volumes 527-529)

Pages:

531-534

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.531

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Online since:

October 2006

Authors:

W.E. Carlos, E.R. Glaser, N.Y. Garces, B.V. Shanabrook, Mark A. Fanton

Keywords:

Deep Level, Divacancy, EPR, Photoluminescence (PL)

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