Theoretical Investigations of Microwave Characteristics of Tunnett Diodes Made of Silicon Carbide
p.977
p.977
Challenges and First Results of SiC Schottky Diode Manufacturing using a 3-Inch Technology
p.981
p.981
4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues
p.985
p.985
Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation
p.989
p.989
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
p.993
p.993
Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature
p.997
p.997
Improvements in the Reverse Characteristics of 4H-SiC Schottky Barrier Diodes by Hydrogen Treatments
p.1001
p.1001
P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching
p.1005
p.1005
Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate
p.1009
p.1009
Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 457-460)
Pages:
993-996
Citation:
Online since:
June 2004
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