High Breakdown Field p-Type 3C-SiC Schottky Diodes Grown on Step-Free 4H-SiC Mesas

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[12] 4H <0001>.

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[13] 4H <1120> & <0338>.

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[14] 0 1 2 3 4 5 1 1017 3 1017 5 1017 Breakdown Electric Field [MV/cm] Doping [1/cm3] Silicon.

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[12] 4H <0001>.

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[13] 4H <1120> & <0338>.

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[3] 4H p-type Schottky (this work) Fig. 6 Breakdown electric field vs. doping at 23°C.

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