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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Fabrication and Simulation of 4H-SiC PiN Diodes...

Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

879-882

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.879

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Online since:

September 2003

Authors:

Igor Sankin, J.B. Dufrene, J. Neil Merrett, Jeff B. Casady

Keywords:

Device Simulation, Edge Termination, Mesa Guard Rings, PiN Diode

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DOI: 10.1063/1.323509