Use of Laser Interferometry and Optical Emission Spectroscopy for Monitoring the Reactive Ion Etching of 6H - and 4H-SiC
p.693
p.693
Diffusion-Welded Al Contacts to p-Type SiC
p.697
p.697
Thermal Etching of 6H-SiC (11-20) Substrate Surface
p.701
p.701
Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
p.705
p.705
Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
p.709
p.709
Pd-Based Ohmic Contacts to LPE 4H-SiC with Improved Thermal Stability
p.713
p.713
Surface Structure of Electrochemically Etched α-SiC Substrates
p.717
p.717
Schottky-Ohmic Transition in Nickel Silicide/SiC System: Is it Really a Solved Problem?
p.721
p.721
Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process
p.725
p.725
Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 433-436)
Pages:
709-712
Citation:
Online since:
September 2003
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