Paper Titles

Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETs
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Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs
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Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETs
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Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs
p.1053

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing
p.1057

Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing
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4H-SiC MOSFETs on (03-38) Face
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Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel Structure
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4H-SiC ACCUFET with a Two-Layer Stacked Gate Oxide
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HomeMaterials Science ForumMaterials Science Forum Vols. 389-393A Large Reduction in Interface-State Density for...

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H₂ and H₂O Vapor Atmosphere Post-Oxidation Annealing

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Silicon Carbide and Related Materials 2001

Info:

Periodical:

Materials Science Forum (Volumes 389-393)

Pages:

1057-1060

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.389-393.1057

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Online since:

April 2002

Authors:

Kenji Fukuda, Junji Senzaki, Mitsuhiro Kushibe, Kazutoshi Kojima, Ryouji Kosugi, Seiji Suzuki, Shinsuke Harada, Takaya Suzuki, Tomoyuki Tanaka, Kazuo Arai

Keywords:

4H-SiC (11-20) Plane, C-V Characteristics, Interface State Density (D_it), MOS Capacitor, POA

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