X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide
p.283
p.283
X-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiC
p.287
p.287
High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers
p.291
p.291
Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
p.295
p.295
Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
p.299
p.299
A Simple Non-Destructive Technique to Detect Micropipes in Silicon Carbide
p.303
p.303
Micropipe and Macrodefect Healing in SiC Crystals during Liquid Phase Processing
p.307
p.307
Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw Dislocations
p.311
p.311
Growth Evolution of Dislocation Loops in Ion Implanted 4H-SiC
p.315
p.315
Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
299-302
Citation:
Online since:
January 2001
Authors:
Keywords:
Price:
Permissions: