Source Material Related Distribution of Defects in 6H-SiC Single Crystals
p.263
p.263
Characterization of 2 Inch SiC Wafers Made by the Sublimation Method
p.267
p.267
Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
p.271
p.271
Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC
p.275
p.275
4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing
p.279
p.279
X-ray Diffraction, Micro-Raman and Birefringence Imaging of Silicon Carbide
p.283
p.283
X-Ray Diffraction Line Profile Analysis of Neutron Irradiated 6H-SiC
p.287
p.287
High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers
p.291
p.291
Defect Analysis of SiC Sublimation Growth by the In-Situ X-Ray Topography
p.295
p.295
4H- and 6H-SiC Rutherford Back Scattering-Channeling Spectrometry: Polytype Finger Printing
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
279-282
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Online since:
January 2001
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