Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence Data
p.1323
p.1323
Are there any Shallow Acceptors in GaN?
p.1327
p.1327
Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure
p.1331
p.1331
Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
p.1335
p.1335
Cathodoluminescence of Cubic GaN Epilayers
p.1339
p.1339
Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates
p.1343
p.1343
Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
p.1347
p.1347
Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
p.1351
p.1351
Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
p.1355
p.1355
Cathodoluminescence of Cubic GaN Epilayers
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1339-1342
Citation:
Online since:
February 1998
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