Preface
Unified Theory of Defects in Insulators
p.1
p.1
Optical and Magnetic Resonance Studies of Defects in GaN
p.9
p.9
The Effective Mass Donor in Galliumnitride
p.17
p.17
Free Electrons and Resonant Donor State in Gallium Nitride
p.23
p.23
Electrically and Optically Detected Magnetic Resonance Studies of GaN-Based Heterostructures
p.25
p.25
Carrier Localization in Gallium Nitride
p.31
p.31
Time-Resolved ODMR Measurements on the 'Yellow Luminescence' in MOCVD-Grown GaN Films
p.37
p.37
Luminescence of Doped and Undoped Bulk Crystals of GaN
p.43
p.43
Unified Theory of Defects in Insulators
Abstract:
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Periodical:
Materials Science Forum (Volumes 196-201)
Pages:
1-8
Citation:
Online since:
November 1995
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