Distribution & Access For Publication Downloads News About Us Contact Us
Paper Titles
Improved SiC MOSFET SPICE Model to Avoid Convergence Errors
p.856
Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs
p.865
1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop
p.872
Common-Drain Bidirectional 1200V SiC MOSFETs
p.882
Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs
p.889
20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs
p.899
Experimental Demonstration of Ruggedness in 13 kV SiC-IGBT
p.905
Wide-Range Prediction of Ultra-High Voltage SiC IGBT Static Performance Using Calibrated TCAD Model
p.911
Transient Performance of >10kV SiC IGBT with an Optimized Retrograde p-Well
p.917

Mechanisms of Heavy Ion-Induced Single Event Burnout in 4H-SiC Power MOSFETs

Article Preview

Abstract:

This paper describes the mechanisms behind the failure of silicon carbide (SiC) Power MOSFETs (metal oxide semiconductor field effect transistors) when struck by a heavy ion. The modeled device is designed to simulate a commercially available 1200 V power MOSFET under the strike of a silver ion with a Linear Energy Transfer (LET) of 46 MeV-cm2/mg commonly used in single event effect (SEE) testing. The device is shown in simulation to fail near 500 V, which is in close agreement to experiments. The failure occurs near the interface between the epitaxial layer and the substrate layer due to the rapid increase of the electric field in that region and destruction of the device from impact ionization. Two improved designs were proposed and investigated that would help to mitigate the electric field in these regions and improve the device’s tolerance to single-event burnout (SEB). The new designs increased the voltage at which SEB occurs from 500 V to over 900 V and increased the specific on-resistance (Ron,sp) by only 5%.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2019 View Preview

Info:

Periodical:

Materials Science Forum (Volume 1004)

Pages:

889-896

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.889

Citation:

Cite this paper

Online since:

July 2020

Authors:

Joseph A. McPherson*, Collin W. Hitchcock, T. Paul Chow, Wei Ji, Andrew A. Woodworth

Keywords:

DMOSFET, Heavy Ions, Power MOSFET, Single-Event Burnout, Single-Event Effects

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

* - Corresponding Author

References

[1] T. Nitta et al., Cosmic Ray Failure Mechanism and Critical Factors for 3.3kV Hybrid SiC Modules, in PCIM Europe 2016; International Exhibition and Conference Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 566.

Google Scholar

[2] A. F. Witulski et al., Single-Event Burnout Mechanisms in SiC Power MOSFETs, IEEE Trans. Nucl. Sci. 65, 256 (2018).

Google Scholar

[3] X. Zhu et al., Radiation Hardness Study on SiC Power MOSFETs, ICSCRM (2017).

Google Scholar

[4] T. Shoji, S. Nishida, K. Hamada, and H. Tadano, Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes, Japanese J. Appl. Phys. 53, 04EP03 (2014).

DOI: 10.7567/jjap.53.04ep03

Google Scholar

[5] D. J. Lichtenwalner et al., Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout, Materials Science Forum 924, 559 (2018).

DOI: 10.4028/www.scientific.net/msf.924.559

Google Scholar

[6] S.-H. Ryu et al., Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications, Materials Science Forum 717, 1059 (2012).

DOI: 10.4028/www.scientific.net/msf.717-720.1059

Google Scholar

[7] Sentaurus Device User Guide, Synopsys, Mountain View, CA, USA, (2014).

Google Scholar

[8] C. J. Werner et al., MCNP6.2 Release Notes, Los Alamos National Laboratory, report LA_UR-18-20808 (2018).

Google Scholar

[9] D. K. Avasthi, G. K. Mehta, Ion Matter Interaction, in Swift Heavy Ions for Materials Engineering and Nanostructuring, 145, 47 (2011).

DOI: 10.1007/978-94-007-1229-4_2

Google Scholar

[10] S. Kuboyama et al., Anomalous Charge Collection in Silicon Carbide Schottky Barrier Diodes and Resulting Permanent Damage and Single-Event Burnout, IEEE Trans. Nucl. Sci. 53, 3343 (2006).

DOI: 10.1109/tns.2006.885165

Google Scholar

[11] J. A. McPherson et al., Heavy Ion Transport Modeling for Single-Event Burnout in Sic-Based Power Devices, IEEE Trans. Nucl. Sci. 66, 474 (2019).

DOI: 10.1109/tns.2018.2880865

Google Scholar

[12] M. Lades, Modeling and Simulation of Wide Bandgap Semiconductor Devices: 4H/6H-SiC, Ph.D. Dissertation Technische Universität München (2000).

Google Scholar

[13] H. Niwa, J. Suda, and T. Kimoto, Temperature Dependence of Impact Ionization Coefficients in 4H-SiC, Materials Science Forum 778, 461 (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.461

Google Scholar

[14] O. Nilsson et al., Determination of the thermal diffusivity and conductivity of monocrystalline silicon carbide (300-2300 K), High Temperatures-High Pressures 29, 73 (1997).

DOI: 10.1068/htec142

Google Scholar

[15] Y. S. Touloukian and E. H. Buyco, Specific Heat Nonmetallic Solids, in Thermophysical Properties of Matter, 5, 448 (1970).

Google Scholar

Scientific.Net is a registered brand of Trans Tech Publications Ltd
© 2024 by Trans Tech Publications Ltd. All Rights Reserved