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HomeMaterials Science ForumMaterials Science Forum Vol. 10044H-SiC MOSFET Source and Body Laser Annealing...

4H-SiC MOSFET Source and Body Laser Annealing Process

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Abstract:

This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime. Characterization was carried out through micro-Raman spectroscopy, Photoluminescence (PL), Transmission Electron Microscopy (TEM) and outcomes were than compared with 1h thermally annealed at 1650-1770-1750 °C P implanted samples (source implant) and P and Al implanted samples for 30 minutes at 1650 °C (source and body implants). Experimental results demonstrate that laser annealing enables crystal recovery in the energy density range between 0.50 and 0.60 J/cm². Unlike the results obtained with thermal annealing where stress up to 172 Mpa and high carbon vacancies (V_c) concentration is recorded, laser annealing provides almost stress free samples and much less defective crystal avoiding intra-bandgap carrier recombination. Implant was almost preserved except for step-bouncing and surface oxidation phenomena leading to surface roughening. However, the results of this work gives way to laser annealing process practicability for lattice damage recovery and dopant activation.

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Silicon Carbide and Related Materials 2019

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

705-711

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.705

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Online since:

July 2020

Authors:

Cristiano Calabretta*, Marta Agati, Massimo Zimbone, Simona BONINELLI, Andrea Castiello, Alessandro Pecora, Guglielmo Fortunato, Lucia Calcagno, Lorenzo Torrisi, Francesco La Via

Keywords:

Body, Laser Annealing, MOSFET, Photoluminescence, Raman, Source, TEM, Thermal Annealing

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* - Corresponding Author

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