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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Direct Bonding of Diamond Substrate at Low...

Direct Bonding of Diamond Substrate at Low Temperatures under Atmospheric Condition

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Abstract:

A monocrystalline diamond substrate was bonded with a Si substrate employing a direct bonding technique. The diamond and Si surfaces were functionalized with hydroxyl (–OH) groups and subsequently bonded by the thermal dehydration reaction across the bonding interface. When a diamond (111) surface was treated with a mixture of H₂SO₄ and H₂O₂, it generated an atomic bond of C–O–Si with an oxygen-plasma-irradiated Si substrate. The bonding technique of diamond using the H₂SO₄/H₂O₂ mixture is expected to contribute to the future integration of diamond and semiconductor substrates because it allows low-temperature bonding in atmospheric air with negligible crystallinity damage.

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Silicon Carbide and Related Materials 2019

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

206-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.206

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Online since:

July 2020

Authors:

Takashi Matsumae*, Yuichi Kurashima, Hitoshi Umezawa, Hideki Takagi

Keywords:

Damage-Free Layer Transfer, Diamond, Direct Bonding, Low Temperature Bonding

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