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HomeKey Engineering MaterialsKey Engineering Materials Vol. 790Growth of ZnSe Nanowires and their...

Growth of ZnSe Nanowires and their Photoluminescence Spectra

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Abstract:

Zinc selenide (ZnSe) nanowires were grown on Si and fused quartz substrates by a simple vapor transport method of heating the ZnSe powder at 1100 °C in a tube of the furnace. The obtained yellow colored product has indicated to be the high density of ZnSe nanowires with diameters ranging from 50 to 200 nm. Low-temperature photoluminescence spectra for ZnSe nanowires show near band-edge emissions. The free excitonic emissions were observed at ~2.8 eV.

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Advanced Micro-Device Engineering VIII

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Periodical:

Key Engineering Materials (Volume 790)

Pages:

55-59

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.790.55

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Cite this paper

Online since:

November 2018

Authors:

Shunji Ozaki*, Kazuya Matsumoto

Keywords:

Free Exciton, Nanowires, Photoluminescence, Vapor Transport Method, ZnSe

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* - Corresponding Author

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