Synthesis and Growth Mechanism of SiC/SiO2 Core-Shell Nanowires by Thermal Evaporation Method

Noppasint Jiraborvornpongsa; Masamitsu Imai; Katsumi Yoshida; Toyohiko Yano

doi:10.4028/www.scientific.net/KEM.617.195

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 617Synthesis and Growth Mechanism of SiC/SiO2...

Synthesis and Growth Mechanism of SiC/SiO₂ Core-Shell Nanowires by Thermal Evaporation Method

Abstract:

In this study, SiC/SiO₂ core-shell nanowires (SiCNWs) were fabricated by thermal evaporation method without any catalyst, using pre-oxidized silicon powder and methane (CH₄) gas as precursors. The reaction temperature was 1340°C in an inert atmosphere. The SiCNWs produced by this process had a single crystal β-SiC core ranging from 20 to 80 nm in diameter and low-crystalline SiO₂ shell about 10-20 nm thick, and up to 1 mm long. The exhaust gas from the production system was analyzed by gas chromatography and the growth activity of SiCNWs was captured by digital camera during a soaking period. From the results, CO gas was detected only when SiCNWs were growing and was not found when methane gas was stopped. It was clarified that CO gas was produced as a by-product during the formation of SiCNWs. The formation mechanism of SiCNWs synthesized by thermal evaporation method was suggested to be oxide-assisted growth mechanism.

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Periodical:

Key Engineering Materials (Volume 617)

Pages:

195-198

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.617.195

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Online since:

June 2014

Authors:

Noppasint Jiraborvornpongsa*, Masamitsu Imai, Katsumi Yoshida, Toyohiko Yano

Keywords:

Formation Mechanism, Gas Chromatography, SiC Nanowires, Thermal Evaporation

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