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Strain Mapping by Scanning Low Energy Electron Microscopy

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Abstract:

The use of the scanning low energy electron microscopy (SLEEM) has been slowly making its way into the field of materials science, hampered not by limitations in the technique but rather by relative scarcity of these instruments in research institutes and laboratories. This paper reports the results obtained from an investigation of the microstructure of ultra fine-grained (UFG) copper fabricated using equal channel angular pressing (ECAP) method, namely in the as-pressed state and after annealing. SLEEM is very sensitive to the perfection of crystal lattice and using SLEEM, local strain can be effectively imaged.

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Info:

Periodical:

Key Engineering Materials (Volume 465)

Pages:

338-341

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.465.338

Citation:

Cite this paper

Online since:

January 2011

Authors:

Šárka Mikmeková, Ondřej Man, Libor Pantělejev, Miloš Hovorka, I. Müllerová, Luděk Frank, Miloslav Kouřil

Keywords:

Contrast of Crystal Orientation, Microscopic Strain, Scanning Low Energy Electron Microscopy (SLEEM)

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